Environment-Friendly Preparation of Reaction-Bonded Silicon Carbide by Addition of Boron in the Silicon Melt

Abstract

Reaction-bonded silicon carbide ceramics were sintered by infiltration of Si and B–Si alloy under an argon atmosphere at different temperatures. The element boron was added to the silicon melt to form a B–Si alloy first. The mechanical properties of samples were improved by infiltration of the B–Si melt. The samples infiltrated with the Si-only melt were found to be very sensitive to experimental temperature. The bending strengths of 58.6 and 317.0 MPa were achieved at 1530 and 1570 °C, respectively. The sample made by infiltration of B–Si alloy was successfully sintered at 1530 °C. The relative density of the sample was more than 90%. The infiltration of B–Si alloy reduced the sintering temperature and the bending strength reached 326.9 MPa. The infiltration mechanism of B–Si alloy is discussed herein.