Quality Improvement of Laser-Induced Periodic Ripple Structures on Silicon Using a Bismuth-Indium Alloy Film

Abstract

In this work, a new buffer layer material, a bismuth-indium (Bi-In) alloy, was utilized to improve the quality of large-area, laser-induced periodic ripple structures on silicon. Better-defined ripple structures and larger modification areas were obtained at different scanning speeds by pre-depositing a Bi-In film. The single-spot investigations indicated that ripple structures were much easier to form on silicon coated with the Bi-In film under laser fluences of 2.04 and 2.55 J/cm2 at a fixed pulse number of 200 in comparison with on bare silicon. A physical model in terms of the excellent thermal conductivity contributed by the free electrons in the Bi-In film homogenizing the thermal distribution caused by the laser irradiation in the early stage of the formation of laser-induced periodic surface structures was proposed to explain the above phenomena. The results show that the Bi-In film enabled a wider range of laser fluences to generate periodic structures and helped to form regular ripple structures on the silicon. In addition, the modulation effects of the laser fluence and pulse number on surface structures were studied experimentally and are discussed in detail.