Affiliation:
1. Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701, Republic of Korea
Abstract
Dopamine is a catecholamine neurotransmitter that plays a significant role in the human central nervous system, even at extremely low concentrations. Several studies have focused on rapid and accurate detection of dopamine levels using field-effect transistor (FET)-based sensors. However, conventional approaches have poor dopamine sensitivity with values <11 mV/log [DA]. Hence, it is necessary to increase the sensitivity of FET-based dopamine sensors. In the present study, we proposed a high-performance dopamine-sensitive biosensor platform based on dual-gate FET on a silicon-on-insulator substrate. This proposed biosensor overcame the limitations of conventional approaches. The biosensor platform consisted of a dual-gate FET transducer unit and a dopamine-sensitive extended gate sensing unit. The capacitive coupling between the top- and bottom-gate of the transducer unit allowed for self-amplification of the dopamine sensitivity, resulting in an increased sensitivity of 373.98 mV/log[DA] from concentrations 10 fM to 1 μM. Therefore, the proposed FET-based dopamine sensor is expected to be widely applied as a highly sensitive and reliable biosensor platform, enabling fast and accurate detection of dopamine levels in various applications such as medical diagnosis and drug development.
Subject
Clinical Biochemistry,General Medicine,Analytical Chemistry,Biotechnology,Instrumentation,Biomedical Engineering,Engineering (miscellaneous)
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