The Memristive Properties and Spike Timing-Dependent Plasticity in Electrodeposited Copper Tungstates and Molybdates

Abstract

Memristors possess non-volatile memory, adjusting their electrical resistance to the current that flows through them and allowing switching between high and low conducting states. This technology could find applications in fields such as IT, consumer electronics, computing, sensors, and medicine. In this paper, we report successful electrodeposition of thin-film materials consisting of copper tungstate and copper molybdate (CuWO4 and Cu3Mo2O9), which showed notable memristive properties. Material characterisation was performed with techniques such as XRD, XPS, and SEM. The electrodeposited materials exhibited the ability to switch between low and high resistive states during varied cyclic scans and short-term impulses. The retention time of these switched states was also explored. Using these materials, the effects seen in biological systems, specifically spike timing-dependent plasticity, were simulated, being based on analogue operation of the memristors to achieve multiple conductivity states. Bio-inspired simulations performed directly on the material could possibly offer energy and time savings for classical computations. Memristors could be crucial for the advancement of high-efficiency, low-energy neuromorphic electronic devices and technologies in the future.