A Fast Transient Response Capacitor-Less LDO with Transient Enhancement Technology

Author:

Chen Chufan1,Sun Mengyuan1,Wang Leiyi12,Huang Teng1,Xu Min1

Affiliation:

1. State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China

2. School of Electronic and Information Engineering, Soochow University, Suzhou 215006, China

Abstract

This paper proposes a fast transient load response capacitor-less low-dropout regulator (CL-LDO) for digital analog hybrid circuits in the 180 nm process, capable of converting input voltages from 1.2 V to 1.8 V into an output voltage of 1 V. The design incorporates a rail-to-rail input and push–pull output (RIPO) amplifier to enhance the gain while satisfying the requirement for low power consumption. A super source follower buffer (SSFB) with internal stability is introduced to ensure loop stability. The proposed structure ensures the steady-state performance of the LDO without an on-chip capacitor. The auxiliary circuit, or transient enhancement circuit, does not compromise the steady-state stability and effectively enhances the transient performance during sudden load current steps. The proposed LDO consumes a quiescent current of 47 µA and achieves 25 µV/mA load regulation with a load current ranging from 0 to 20 mA. The simulation results demonstrate that a settling time of 0.2 µs is achieved for load steps ranging from 0 mA to 20 mA, while a settling time of 0.5 µs is attained for load steps ranging from 20 mA to 0 mA, with an edge time of 0.1 µs.

Publisher

MDPI AG

Reference23 articles.

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3. High Power-Supply-Rejection (PSR) Current-Mode Low-Dropout (LDO) Regulator;Patel;IEEE Trans. Circuits Syst. II Express Briefs,2010

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5. Yadav, B.B., Mounika, K., De, K., and Abbas, Z. (2020, January 12–14). Low Quiescent Current, Capacitor-Less LDO with Adaptively Biased Power Transistors and Load Aware Feedback Resistance. Proceedings of the 2020 IEEE International Symposium on Circuits and Systems (ISCAS), Seville, Spain.

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