Improving the p-Type CuCrO2 Thin Film’s Electrical and Optical Properties

Author:

Jiang Jiaxin12,You Yu-Feng12,Vasu Dhanapal12ORCID,Chen Sheng-Chi3,Chiu Te-Wei12ORCID,Prashanth Gopi4,Chen Po Chou56

Affiliation:

1. Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, 1, Sec. 3, Zhongxiao E. Rd., Taipei 106, Taiwan

2. Institute of Materials Science and Engineering, National Taipei University of Technology, No. 1, Sec. 3, Chung-Hsiao East Road, Taipei 106, Taiwan

3. Department of Materials Engineering and Center for Plasma and Thin Film Technologies, Ming Chi University of Technology, New Taipei City 243, Taiwan

4. Godi Energy, 12 (p), 13, 14 (p), Road No. 2, Hardware Park, Hyderabad 500005, India

5. Graduate Institute of Organic and Polymeric Materials, National Taipei University of Technology, Taipei 106, Taiwan

6. E-Current Co., Ltd., 10F.-5, No. 50, Sec. 4, Nanjing E. Rd., Songshan Dist., Taipei City 10553, Taiwan

Abstract

In this research, we studied the functional properties of CuCrO2, which is the most promising p-type transparent conductive oxide (TCO). The thin films were fabricated using a spin coating technique. The diffraction patterns were obtained with the help of X-ray diffractions, and the optical properties of absorption characteristics were studied using UV-visible absorption. The physical properties of film formation and surface morphology were analyzed using FESEM analysis. The aging properties were also analyzed with the help of various precursors with different aging times. The CuCrO2 thin films’ functional properties were determined by using chelating agent and precursor solution aging times. The CuCrO2 thin films have better transmittance, resistance, figure of merit (FOM), and electrical conductivity. Moreover, the resistivity values of the CuCrO2 thin films are 7.01, 9.90, 12.54, 4.10, 2.42, and 0.35 Ω cm. The current research article covers the preparation of copper chromium delafossite thin films. These thin films can be suitable for hole transport layers in transparent optoelectronic devices.

Funder

Ministry of Science and Technology of Taiwan

National Science and Technology Council of Taiwan

Publisher

MDPI AG

Subject

General Materials Science

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