Aggregation of ODC(I) and POL Defects in Bismuth Doped Silica Fiber

Author:

Li Xiaofei1ORCID,Wang Binbin1,Song Tingting1,Zhang Min1,Zeng Tixian2,Chen Jiang3,Zhang Feiquan3

Affiliation:

1. School of Physics and Astronomy, China West Normal University, Nanchong 637002, China

2. College of Optoelectronic Engineering, Chengdu University of Information Technology, Chengdu 610225, China

3. Sichuan Hetai Optical Fiber Co., Ltd., Nanchong 637002, China

Abstract

First-principles calculations were used to simulate the aggregation of the peroxy chain defect POL and the oxygen vacancy defect ODC(I). Defect aggregation’s electronic structure and optical properties were investigated. The two defects were most likely to accumulate on a 6-membered ring in ortho-position. When the two defects are aggregated, it is discovered that 0.75 ev absorption peaks appear in the near-infrared band, which may be brought on by the addition of oxygen vacancy defect ODC(I). We can draw the conclusion that the absorption peak of the aggregation defect of ODC(I) defect and POL is more prominent in the near infrared region and visible light area than ODC(I) defect and POL defect.

Funder

Nanchong Science and Technology Project

Sichuan Provincial Education Department Project

China West Normal University cultivation project

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering

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