Abstract
In this paper, we investigate the broad spectral photocurrent properties of the La0.67Ca0.33MnO3/Si (LCMO/Si) heterojunction from 200 nm to 2.0 μm, as the temperature increases from 95 to 300 K. We observed the junction’s uniform responsivity in the visible range and five absorption peaks at 940 nm, 1180 nm, 1380 nm, 1580 nm, and 1900 nm wavelengths. The temperature showed effective affection to the photocurrents at absorption peaks and the transition point occurred at 216 K, which was also displayed in the temperature dependence of junction resistance. On the basis of the results, we propose a possible model involving the quantum size effect at the junction interface as the mechanism. This understanding of the infrared photodetection properties of oxide heterostructures should open a route for devising future microelectronic devices.
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering
Cited by
2 articles.
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