A 54 µW CMOS Auto-Trimming Bandgap References (ATBGR) Achieving 90 dB PSRR for Artificial Intelligence of Things (AIoT) Chips

Author:

Poongan Balamahesn1ORCID,Rajendran Jagadheswaran1ORCID,Mariappan Selvakumar1ORCID,Rawat Arvind Singh2ORCID,Kumar Narendra3,Nathan Arokia4,Yarman Binboga S.5

Affiliation:

1. Collaborative Microelectronic Design Excellence Center (CEDEC), Universiti Sains Malaysia, Bayan Lepas 11900, Malaysia

2. School of Computing, DIT University, Dehradun 248009, Uttarakhand, India

3. Department of Electrical Engineering, Faculty of Engineering, University of Malaya, Kuala Lumpur 50603, Malaysia

4. Darwin College, Cambridge University, Cambridge CB3 9EU, UK

5. Department of Electrical and Electronics Engineering, Istanbul University, 34320 Istanbul, Turkey

Abstract

An Auto-Trimming CMOS Bandgap References Circuit (ATBGR) with PSRR enhancement circuit for Artificial Intelligence of Things (AIoT) chips is presented in this paper. The ATBGR is designed with a first-order temperature compensation technique providing a stable reference voltage of 1.25 V in the ranges of input voltages from 1.65 V to 4.5 V. An auto-trimming circuit is integrated into a PTAT resistor of BGR to minimize the influences of the process variations. The four parallel resistor pairs with PMOS switches are connected in series with the PTAT resistor. The reference voltage, VREF, is compared to an external constant value, 1.25 V, through an operational amplifier, and the output of the de-multiplexer is used to configure the PMOS switches. High power supply rejection is achieved through a PSRR enhancement circuit constituting a cascaded PMOS common gate pair. The ATBGR circuit is fabricated in 180 nm CMOS technology, consuming an area of 0.03277 mm2. The auto-trimming method yields an average temperature coefficient of 9.99 ppm/°C with temperature ranges from −40 °C to 125 °C, and a power supply rejection ratio of −90 dB at 100 MHz is obtained. The line regulation of the proposed circuit is 0.434%/V with power consumption of 54.12 µW at room temperature.

Funder

Ministry of Higher Education

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering

Reference18 articles.

1. A 24.4 ppm/°C Voltage Mode Bandgap Reference with a 1.05 V Supply;Nagulapalli;IEEE Trans. Circuits Syst. II Express Briefs,2021

2. A Sub-1 V, 120 nW, PVT-Variation Tolerant, Tunable, and Scalable Voltage Reference with 60-dB PSNA;Chatterjee;IEEE Trans. Nanotechnol.,2017

3. An All-MOSFET Sub-1-V Voltage Reference with a -51-dB PSR up to 60 MHz;Alhasssan;IEEE Trans. Very Large Scale Integr. Syst.,2017

4. A 192-pW Voltage Reference Generating Bandgap-Vth with Process and Temperature Dependence Compensation;Ji;IEEE-Solid-State Circuits,2019

5. Threshold-Voltage Temperature Drift in Ion-Implanted MOS Transistors;Song;IEEE J. Solid-State Circuits,1982

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