Affiliation:
1. Department of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
Abstract
In this study, the read operation of feedback field-effect transistors (FBFETs) with quasi-nonvolatile memory states was analyzed using a device simulator. For FBFETs, write pulses of 40 ns formed potential barriers in their channels, and charge carriers were accumulated (depleted) in these channels, generating the memory state “State 1 (State 0)”. Read pulses of 40 ns read these states with a retention time of 3 s, and the potential barrier formation and carrier accumulation were influenced by these read pulses. The potential barriers were analyzed, using junction voltage and current density to explore the memory states. Moreover, FBFETs exhibited nondestructive readout characteristics during the read operation, which depended on the read voltage and pulse width.
Funder
National Research Foundation of Korea (NRF) grant funded by the Korean government
Brain Korea 21 Plus Project through the NRF funded by the Ministry of Science, ICT & Future Planning, Samsung Electronics
Korea University Grant
Subject
General Materials Science,General Chemical Engineering
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