Correlation between the Morphology of ZnO Layers and the Electroluminescence of Quantum Dot Light-Emitting Diodes

Abstract

The present work shows the effect of the ZnO layer morphology on inverted quantum dot light-emitting diodes (QLEDs) using different spin-coating processes. In the inverted structure of ITO/ZnO/QDs/CBP/MoO3/Al, ZnO nanoparticles were used as the electron transport layer. The utilization of a two-step spin-coating process to deposit a ZnO layer on a patterned ITO glass substrate resulted in an increase in the surface roughness of the ZnO layer and a decrease in the luminance of the QLEDs. However, the current efficiency of the device was enhanced by more than two-fold due to the reduced current density. Optimization of the ZnO spin-coating process can efficiently improve the optical and electrical properties of QLEDs.