Impact of Titanium Skull Plate on Transcranial Magnetic Stimulation: Analysis of Induced Electric Fields

Author:

Lu Mai1ORCID,Ueno Shoogo2

Affiliation:

1. Key Laboratory of Opto-Electronic Technology and Intelligent Control of Ministry of Education, Lanzhou Jiaotong University, Lanzhou 730070, China

2. Department of Biomedical Engineering, Graduate School of Medicine, The University of Tokyo, Tokyo 113-0033, Japan

Abstract

Background: Implanted titanium skull plates (TSPs) in cranioplasty are used to replace or reconstruct areas of the skull that have been damaged or removed due to trauma, surgery, or other medical conditions. However, the presence of a TSP in the head may influence the distribution of the electric field induced during transcranial magnetic stimulation (TMS) procedures. The purpose of this study was to determine how the presence of TSP would interfere with TMS-induced cortical electric fields. Methods: The TMS with a figure-of-eight coil was applied to a realistic head model with TSPs. The distribution of the induced electric field in head tissues was calculated by employing the impedance method, and the results were compared with that of a normal head without TSP. Results: Simulation results show that the distribution of the induced electric field has changed greatly for the head model with TSP. The maximum value of the induced electric field in head tissues was present under one of the circular coil wings rather than in the tissues beneath the junction of the two wings of the Fo8 coil. Conclusions: The induced electric field in deep brain regions was increased for the head model with TSP, which could potentially lead to deep brain stimulation. Since the presence of metallic TSP can greatly influence the distribution of the induced electric field in TMS applications, it is important to adjust the treatment scheme when considering TMS for individuals with cranial titanium plates.

Funder

National Nature Science Foundation of China

Department of Education of Gansu Province

Publisher

MDPI AG

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