Spectral Linewidth vs. Front Facet Reflectivity of 780 nm DFB Diode Lasers at High Optical Output Power

Author:

Nguyen Thanh-Phuong,Wenzel Hans,Brox Olaf,Bugge Frank,Ressel Peter,Schiemangk Max,Wicht Andreas,Quoc Tien Tran,Tränkle Günther

Abstract

The influence of the front facet reflectivity on the spectral linewidth of high power DFB (distributed feedback) diode lasers emitting at 780 nm has been investigated theoretically and experimentally. Characterization of lasers at various front facet reflections showed substantial reduction of the linewidth. This behavior is in reasonable agreement with simulation results. A minimum linewidth of 8 kHz was achieved at an output power of 85 mW with the laser featuring a front facet reflectivity of 30%. The device with a front facet reflectivity of 5% reached the same linewidth value at an output power of 290 mW.

Publisher

MDPI AG

Subject

Fluid Flow and Transfer Processes,Computer Science Applications,Process Chemistry and Technology,General Engineering,Instrumentation,General Materials Science

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Fabrication of 780 nm DBR laser diodes for quantum applications;Photonics for Quantum 2023;2023-07-19

2. Optimization and fabrication of 780 nm DFB lasers for quantum systems;Quantum Computing, Communication, and Simulation III;2023-03-08

3. Monolithically Integrated Extended Cavity Diode Laser emitting at 778 nm;Conference on Lasers and Electro-Optics;2022

4. Gain-coupled 770 nm DFB semiconductor laser based on surface grating;Optics Communications;2021-01

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