Abstract
The aim of the proposed paper is the development of an electro-thermal model of semiconductor component using an indirect modelling approach. The approach is based on the integration of the component’s electrical properties considering non-linear behavior of a V-A characteristic. In this way, the identification of semiconductor material properties considering non-linear dependencies and semiconductor volume is provided. The main aim of the presented approach is simplification of the electro–thermal interaction within finite-element modelling of the semiconductor components. In this way, it is possible to omit more complex boundary definitions and the setting of the semiconductor-based physics. The proposed methodology is presented within the development of a simulation model based on a small high-frequency rectifying diode, taking into account its geometric dimensions and the internal arrangement of its structure. Simulation was performed as a transient analysis, while the results from the steady-state operation for various operational conditions were compared to experimental measurements. Comparison between simulation and experiments is within 5% of the relative error. The achieved results represent appropriate accuracy of model behavior compared to the real operation.
Funder
National Grant Agency Vega
Subject
Energy (miscellaneous),Energy Engineering and Power Technology,Renewable Energy, Sustainability and the Environment,Electrical and Electronic Engineering,Control and Optimization,Engineering (miscellaneous)
Cited by
2 articles.
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