All-Silicon Polarization-Insensitive Metamaterial Absorber in the Terahertz Range

Author:

Xu Zongcheng1,Li Yujie1,Han Bin1,Wang Yue1,Yuan Quan1ORCID,Li Yanan1,He Weiyan1,Hao Junhua1ORCID,Wu Liang2,Yao Jianquan2

Affiliation:

1. Department of Physics, Tianjin Renai College, Tianjin 301636, China

2. Key Laboratory of Opto-Electronics Information Science and Technology, Ministry of Education, Institute of Laser and Opto-Electronics, Tianjin University, Tianjin 300072, China

Abstract

All-silicon terahertz absorbers have attracted considerable interest. We present a design and numerical study of an all-silicon polarization-insensitive terahertz metamaterial absorber. The meta-atoms of the metamaterial absorber are square silicon rings which can be viewed as gratings. By properly optimizing the structure of the meta-atom, we achieve a broadband absorptivity that is above 90% ranging from 0.77 THz to 2.53 THz, with a relative bandwidth of 106.7%. Impedance matching reduces the reflection of the terahertz waves and the (0, ±1)-order diffraction induce the strong absorption. The absorption of this absorber is insensitive to the polarization of the terahertz wave and has a large incident angle tolerance of up to 60 degrees. The all-silicon metamaterial absorber proposed here provides an effective way to obtain broadband absorption in the terahertz regime. Metamaterial absorbers have outstanding applications in terahertz communication and imaging.

Funder

the National Natural Science Foundation of China

Publisher

MDPI AG

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