Introducing a Dilute Single Bath for the Electrodeposition of Cu2(ZnSn)(S)4 for Smooth Layers

Abstract

Cu2(ZnSn)(S)4 (copper, zinc, tin, and sulfide (CZTS)) provides possible advantages over CuInGaSe2 for thin-film photovoltaic devices because it has a higher band gap. Preparing CZTS by electrodeposition because of its high productivity and lower processing costs, electroplating is appealing. Recently published studies reported that the electrodeposition process of CZTS still faces significant obstacles, such as the sulfur atomic ratio (about half of the whole alloy), deposits’ adhesion, film quality, and optical properties. This work introduces an improved bath that facilitates the direct electroplating of CZTS from one processing step. The precursors used were significantly more diluted than the typical baths mentioned in the last few years. An extensive analysis of the electrochemical behavior at various rotation speeds is presented at room temperature (~22 °C). The deposited alloy’s composition and adherence to the molybdenum back contact are examined with agitation. The annealing process was carried out in an environment containing sulfur, and the metal was not added at this stage. The ultimate sulfur composition was adjusted to 50.2%, about the desired atomic ratio. The compound’s final composition was investigated using the Energy-Dispersive X-ray Spectroscopy technique. Finally, X-ray diffraction analysis was applied to analyze CZTS crystallography and to measure thickness.