Effects of Annealing Temperature on Properties of Ti-Ga–Doped ZnO Films Deposited on Flexible Substrates
Author:
Publisher
MDPI AG
Subject
General Materials Science,General Chemical Engineering
Link
http://www.mdpi.com/2079-4991/5/4/1831/pdf
Reference21 articles.
1. Organic light emitting diodes using a Ga:ZnO anode
2. Enhancement of near-band-edge photoluminescence from ZnO films by face-to-face annealing
3. Effects of intermediate metal layer on the properties of Ga–Al doped ZnO/metal/Ga–Al doped ZnO multilayers deposited on polymer substrate
4. Low temperature ITO thin film deposition on PES substrate using pulse magnetron sputtering
5. Preparation of Al-doped ZnO thin film deposited at room temperature
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