Author:
Li Congmeng,Luo Haitian,Gu Hongwei,Li Hui
Abstract
In order to improve the power conversion efficiency (PCE) of Cu(In,Ga)Se2 (CIGS) solar cells, a BaTiO3 (BTO) layer was inserted into the Cu(In,Ga)Se2. The performances of the BTO-coupled CIGS solar cells with structures of Mo/CIGS/CdS/i-ZnO/AZO, Mo/BTO/CIGS/CdS/i-ZnO/AZO, Mo/CIGS/BTO/CdS/i-ZnO/AZO, Mo/CIGS/CdS/BTO/i-ZnO/AZO, Mo/CIGS/BTO/i-ZnO/AZO, Mo/CIGS/CdS/BTO/AZO, and Mo/ CIGS/CdS(5 nm)/BTO(5 nm)/i-ZnO/AZO were systematically studied via the SCAPS-1D software. It was found that the power conversion efficiency (PCE) of a BTO-coupled CIGS solar cell with a device configuration of Mo/CIGS/CdS/BTO/AZO was 24.53%, and its open-circuit voltage was 931.70 mV. The working mechanism for the BTO-coupled CIGS solar cells with different device structures was proposed. Our results provide a novel strategy for improving the PCE of solar cells by combining a ferroelectric material into the p-n junction materials.
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
State Key Laboratory of Metastable Materials Science and Technology
Fujian Key Laboratory of Photoelectric Functional Materials
Subject
General Materials Science
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献