Facile Doping of 2,2,2-Trifluoroethanol to Single-Walled Carbon Nanotubes Electrodes for Durable Perovskite Solar Cells

Author:

Ueoka Naoki1,Hidayat Achmad Syarif1,Oshima Hisayoshi2,Hijikata Yoshimasa3,Matsuo Yutaka12ORCID

Affiliation:

1. Department of Chemical Systems Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

2. Institute of Materials Innovation, Institutes for Future Society, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

3. Advanced Research and Innovation Center, DENSO CORPORATION, 1-1, Showa-cho, Kariya 448-8661, Japan

Abstract

Perovskite solar cells with an indium tin oxide (ITO)/SnO2/CH3NH3PbI3/Spiro-OMeTAD/2,2,2-trifluoroethanol (TFE) doped single-walled carbon nanotube (SWCNT) structure were developed by dropping TFE onto SWCNTs, which replaced the metal back electrode, and a conversion efficiency of 14.1% was achieved. Traditionally, acidic doping of the back electrode, SWCNT, has been challenging due to the potential damage it may cause to the perovskite layer. However, TFE has facilitated easy doping of SWCNT as the back electrode. The sheet resistance of the SWCNTs decreased and their ionization potential shifted to deeper levels, resulting in improved hole transport properties with a lower barrier to carrier transport. Furthermore, the Seebeck coefficient (S) increased from 34.5 μV/K to 73.1 μV/K when TFE was dropped instead of EtOH, indicating an enhancement in the behavior of p-type charge carriers. It was observed that hydrophilic substances adhered less to the SWCNT surface, and the formation of PbI2 was suppressed. These effects resulted in higher conversion efficiency and improved solar cell performance. Furthermore, the decrease in conversion efficiency after 260 days was suppressed, showing improved durability. The study suggests that combining SWCNTs and TFEs improves solar cell performance and stability.

Funder

Japan Society for the Promotion of Science (JSPS) KAKENHI

JST SPRING

Publisher

MDPI AG

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