Magnetic Field-Induced Resistivity Upturn and Non-Topological Origin in the Quasi-One-Dimensional Semimetals

Abstract

As a layered topological nodal line semimetals hosting a quasi-one-dimensional (quasi-1D) crystalline structure, TaNiTe5 has attracted intensive attention. In this research, we analyze the low temperature (low-T) transport properties in single crystals of TaNiTe5. The high anisotropic transport behaviors confirm the anisotropic electronic structure in quasi-1D TaNiTe5. The resistivity shows a magnetic field-induced resistivity upturn followed by a plateau at low temperatures when current is parallel to the c axis and magnetic field is parallel to the b axis. An extremely large magnetoresistance of 1000% has been observed at 2 K and 13 T. Such a magnetic field-induced phenomenon can be generally explained using the topological theory, but we find that the behaviors are well accounted with the classical Kohler’s rule. The analysis of the Hall resistivity points to carrier compensation in TaNiTe5, fully justifying Kohler’s rule. Our findings imply that analogous magnetic field-induced low-T properties in nodal line semimetals TaNiTe5 can be understood in the framework of classical magnetoresistance theories that do not require to invoke the topological surface states.