Numerical Simulation of Crystalline Silicon Heterojunction Solar Cells with Different p-Type a-SiOx Window Layer

Abstract

In this study, p-type amorphous silicon oxide (a-SiOx) films are deposited using a radio-frequency inductively-coupled plasma chemical vapor deposition system. Effects of the CO2 gas flow rate on film properties and crystalline silicon heterojunction (HJ) solar cell performance are investigated. The experimental results show that the band gap of the a-SiOx film can reach 2.1 eV at CO2 flow rate of 10 standard cubic centimeters per minute (sccm), but the conductivity of the film deteriorates. In the device simulation, the transparent conducting oxide and contact resistance are not taken into account. The electrodes are assumed to be perfectly conductive and transparent. The simulation result shows that there is a tradeoff between the increase in the band gap and the reduction in conductivity at increasing CO2 flow rate, and the balance occurs at the flow rate of six sccm, corresponding to a band gap of 1.95 eV, an oxygen content of 34%, and a conductivity of 3.3 S/cm. The best simulated conversion efficiency is 25.58%, with an open-circuit voltage of 741 mV, a short-circuit current density of 42.3 mA/cm2, and a fill factor of 0.816%.