Impact of Temperature on Seebeck Coefficient of Nodal Line Semimetal in Molecular Conductor

Author:

Suzumura Yoshikazu1ORCID

Affiliation:

1. Department of Physics, Nagoya University, Nagoya 464-8602, Japan

Abstract

We examine the impact of temperature (T) on the Seebeck coefficient S, i.e., the T dependence of S for a single-component molecular conductor [Pd(dddt)2] (dddt = 5,6-dihydro-1,4-dithiin-2,3-dithiolate) with a half-filled band, where the coefficient is obtained from a ratio of the thermal conductivity to the electrical conductivity. The present paper demonstrates theoretically the novel result of large anisotropy in the Seebeck coefficient components of three-dimensional Dirac electrons in a molecular conductor. The conductor exhibits a nodal line with the energy variation around the chemical potential and provides the density of states (DOS) with a minimum. Using a threedimensional tight-binding (TB) model in the presence of both impurity and electron–phonon (e–p) scatterings, we study the Seebeck coefficient Sy for the molecular stacking and the most conducting direction. The impact of T on Sy exhibits a sign change, where Sy > 0 with a maximum at high temperatures and Sy < 0 with a minimum at low temperatures. The T dependence of Sy suggests that the contribution from the conduction (valence) band is dominant at low (high) temperatures. Further, it is shown that the the Seebeck coefficient components for perpendicular directions Sx and Sz are much smaller than Sy and present no sign change, in contrast to Sy. These results are analyzed in terms of the spectral conductivity as a function of the energy ϵ close to the chemical potential μ.

Publisher

MDPI AG

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3