Affiliation:
1. Faculty of Physics, West University of Timisoara, Bd. V. Parvan No. 4, 300223 Timisoara, Romania
2. Institute for Advanced Environmental Research, West University of Timisoara (ICAM-WUT), Oituz Str., No. 4, 300086 Timisoara, Romania
3. National Institute of Research and Development for Electrochemistry and Condensed Matter, 144 Dr. A. P. Podeanu, 300569 Timisoara, Romania
4. Spin-Off Nattive-Senz SRL, Str. Dr. A. P. Podeanu, Nr. 144, 300569 Timisoara, Romania
Abstract
Two samples of ZnxMn1−xFe2O4 (x = 0, sample A; and x = 0.4, sample B) were synthesized by the hydrothermal method. From complex impedance measurements in the range 100 Hz–2 MHz and for temperatures T between 30 and 130 °C, the barrier energy between localized states ΔErelax was determined for the first time in these samples. For sample B, a single value of ΔErelax was highlighted (0.221 eV), whilst, for sample A, two values were obtained (0.012 eV and 0.283 eV, below 85 °C and above 85 °C, respectively), associated with two zones of different conductivities. Using the Mott’s VRH model and the CBH model, we determined for the first time both the bandgap energy barrier (Wm) and the hopping (crossover) frequency (ωh), at various temperatures. The results show that, for sample A, Wm has a maximum equal to 0.72 eV at a temperature between 70 and 80 °C, whilst, for sample B, Wm has a minimum equal to 0.28 eV at a temperature of 60 °C, the results being in good agreement with the temperature dependence of the static conductivity σDC(T) of the samples. By evaluating σDC and eliminating the conduction losses, we identified, using a novel approach, a dielectric relaxation phenomenon in the samples, characterized by the activation energy EA,rel. At various temperatures, we determined EA,rel, which ranged from 0.195 eV to 0.77 eV. These results are important, as understanding these electrical properties is crucial to various applications, especially in technologies where temperature variation is significant.
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