Quantum Magnetism in Wannier-Obstructed Mott Insulators

Author:

Huang Xiaoyang1,Wang Taige234,Liu Shang56,Hu Hong-Ye6ORCID,You Yi-Zhuang2ORCID

Affiliation:

1. Department of Physics and Center for Theory of Quantum Matter, University of Colorado, Boulder, CO 80309, USA

2. Department of Physics, University of California, San Diego, CA 92093, USA

3. Department of Physics, University of California, Berkeley, CA 94720, USA

4. Material Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA

5. Kavli Institute for Theoretical Physics, University of California, Santa Barbara, CA 93106, USA

6. Department of Physics, Harvard University, Cambridge, MA 02138, USA

Abstract

We develop a strong coupling approach towards quantum magnetism in Mott insulators for Wannier-obstructed bands. Despite the lack of Wannier orbitals, electrons can still singly occupy a set of exponentially localized but nonorthogonal orbitals to minimize the repulsive interaction energy. We develop a systematic method to establish an effective spin model from the electron Hamiltonian using a diagrammatic approach. The nonorthogonality of the Mott basis gives rise to multiple new channels of spin-exchange (or permutation) interactions beyond Hartree–Fock and superexchange terms. We apply this approach to a Kagome lattice model of interacting electrons in Wannier-obstructed bands (including both Chern bands and fragile topological bands). Due to the orbital nonorthogonality, as parameterized by the nearest-neighbor orbital overlap g, this model exhibits stable ferromagnetism up to a finite bandwidth W∼Ug, where U is the interaction strength. This provides an explanation for the experimentally observed robust ferromagnetism in Wannier-obstructed bands. The effective spin model constructed through our approach also opens up the possibility for frustrated quantum magnetism around the ferromagnet-antiferromagnet crossover in Wannier-obstructed bands.

Publisher

MDPI AG

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