Ultrahigh Responsivity In2O3 UVA Photodetector through Modulation of Trimethylindium Flow Rate

Author:

Li Yifei12ORCID,Chen Tiwei23,Ma Yongjian23,Hu Yu23,Zhang Li2,Zhang Xiaodong23,Yang Jinghang1,Wang Lu12,Zhang Huanyu23,Yan Changling1,Zeng Zhongming23,Zhang Baoshun23

Affiliation:

1. State Key Laboratory of High-Power Semiconductor Laser, School of Physics, Changchun University of Science and Technology, Changchun 130022, China

2. A Nanofabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

3. School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China

Abstract

Oxygen vacancies (Vo) can significantly degrade the electrical properties of indium oxide (In2O3) thin films, thus limiting their application in the field of ultraviolet detection. In this work, the Vo is effectively suppressed by adjusting the Trimethylindium (TMIn) flow rate (fTMIn). In addition, with the reduction of the fTMIn, the background carrier concentration and the roughness of the film decrease gradually. And a smooth In2O3 thin film with roughness of 0.44 nm is obtained when the fTMIn is 5 sccm. The MSM photodetectors (PDs) are constructed based on In2O3 thin films with different fTMIn to investigate the opto-electric characteristics of the films. The dark current of the PDs is significantly reduced by five orders from 100 mA to 0.28 μA with the reduction of the fTMIn from 50 sccm to 5 sccm. In addition, the photo response capacity of PDs is dramatically enhanced. The photo-to-dark current ratio (PDCR) increases from 0 to 2589. Finally, the PD with the fTMIn of 5 sccm possesses a record-high responsivity of 2.53 × 103 AW−1, a high detectivity of 5.43 × 107 Jones and a high EQE of 9383 × 100%. Our work provides an important reference for the fabrication of high-sensitivity UV PDs.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Key Laboratory Construction Project of Nanchang

Jiangxi Province Double Thousand Plan

Jilin Provincial Science and Technology Department Project

Changchun University of Science and Technology Project

Publisher

MDPI AG

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