Tailoring the Graphene Properties for Electronics by Dielectric Materials

Abstract

Tunability of properties is one of the most important features of 2D materials, among which graphene is attracting the most attention due to wide variety of its possible applications. Here, we demonstrated that the carrier concentration in graphene can be efficiently tuned by the material of the dielectric substrate on which it resides. To this end, we fabricated samples of CVD-grown graphene transferred onto silicon wafers covered with alumina, titanium dioxide, and silicon dioxide. We measured the transmission spectra of these samples using a time-domain terahertz spectrometer and extracted the Drude frequency-dependent graphene conductivity. We found that the sheet resistance of graphene is strongly affected by the underlying dielectric material, while the carrier scattering time remains the same. The carrier concentration value was found to range from 7×1011/cm2 in the case of alumina and 4.5×1012/cm2 in the case of titanium dioxide. These estimations are consistent with what can be extracted from the position of the G-peak in the Raman spectra of graphene. Our results show a way to control the graphene doping level in applications where it does not have to be adjusted.