Mechanisms for Enhancing Luminescence Yield in KBr Crystals under the Influence of Low-Temperature Uniaxial Elastic Deformation

Author:

Shunkeyev Kuanyshbek1ORCID,Sagimbayeva Shynar1ORCID,Ubaev Zhiger1ORCID,Kenzhebayeva Adelya1

Affiliation:

1. Scientific Center “Radiation Physics of Materials”, K. Zhubanov Aktobe Regional University, Aktobe 030000, Kazakhstan

Abstract

This study investigates the radiative relaxation of electronic excitations through luminescence spectroscopy techniques applied to high-purity KBr crystals subjected to low-temperature (85 K) uniaxial deformation along the <100> and <110> crystallographic directions. Results demonstrate that the most significant enhancement in the intensity of σ-(4.42 eV) and π-(2.3 eV) luminescence from self-trapped excitons in KBr crystals occurs with elastic deformation along the <110> direction, aligning with the axis of the hole component of the anion self-trapped exciton. Deformation-induced changes in X-ray, tunneling, and thermally stimulated luminescence spectra reveal a new band, denoted as Ex, peaking at approximately 3.58 eV, attributed to tunneling charge exchange between the F’- and VK-centers in their ground state.

Funder

Science Committee of the Ministry of Science and Higher Education of the Republic of Kazakhstan

Publisher

MDPI AG

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