Single-Particle Irradiation Effect and Anti-Irradiation Optimization of a JLTFET with Lightly Doped Source

Abstract

In this article, the particle irradiation effect of a lightly doped Gaussian source heterostructure junctionless tunnel field-effect transistor (DMG-GDS-HJLTFET) is discussed. In the irradiation phenomenon, heavy ion produces a series of electron-hole pairs along the incident track, and then the generated transient current can overturn the logical state of the device when the number of electron-hole pairs is large enough. In the single-particle effect of DMG-GDS-HJLTFET, the carried energy is usually represented by linear energy transfer value (LET). In simulation, the effects of incident ion energy, incident angle, incident completion time, incident position and drain bias voltage on the single-particle effect of DMG-GDS-HJLTFET are investigated. On this basis, we optimize the auxiliary gate dielectric, tunneling gate length for reliability. Simulation results show HfO2 with a large dielectric constant should be selected as the auxiliary gate dielectric in the anti-irradiation design. Larger tunneling gate leads to larger peak transient drain current and smaller tunneling gate means larger pulse width; from the point of anti-irradiation, the tunneling gate length should be selected at about 10 nm.