Effects of Buffer Concentration on the Sensitivity of Silicon Nanobelt Field-Effect Transistor Sensors

Abstract

In this work, a single-crystalline silicon nanobelt field-effect transistor (SiNB FET) device was developed and applied to pH and biomolecule sensing. The nanobelt was formed using a local oxidation of silicon technique, which is a self-aligned, self-shrinking process that reduces the cost of production. We demonstrated the effect of buffer concentration on the sensitivity and stability of the SiNB FET sensor by varying the buffer concentrations to detect solution pH and alpha fetoprotein (AFP). The SiNB FET sensor was used to detect a solution pH ranging from 6.4 to 7.4; the response current decreased stepwise as the pH value increased. The stability of the sensor was examined through cyclical detection under solutions with different pH; the results were stable and reliable. A buffer solution of varying concentrations was employed to inspect the sensing capability of the SiNB FET sensor device, with the results indicating that the sensitivity of the sensor was negatively dependent on the buffer concentration. For biomolecule sensing, AFP was sensed to test the sensitivity of the SiNB FET sensor. The effectiveness of surface functionalization affected the AFP sensing result, and the current shift was strongly dependent on the buffer concentration. The obtained results demonstrated that buffer concentration plays a crucial role in terms of the sensitivity and stability of the SiNB FET device in chemical and biomolecular sensing.