X-ray Detectors Based on Ga2O3 Microwires

Author:

Zhang Chongyang1,Dou Wenjie1,Yang Xun1,Zang Huaping1,Chen Yancheng1,Fan Wei2,Wang Shaoyi2,Zhou Weimin2,Chen Xuexia13,Shan Chongxin1

Affiliation:

1. Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China

2. Science and Technology on Plasma Physics Laboratory, Laser Fusion Research Center, China Academy of Engineering Physics, Mianyang 621900, China

3. School of Materials Science and Engineering, Henan University of Technology, Zhengzhou 450001, China

Abstract

X-ray detectors have numerous applications in medical imaging, industrial inspection, and crystal structure analysis. Gallium oxide (Ga2O3) shows potential as a material for high-performance X-ray detectors due to its wide bandgap, relatively high mass attenuation coefficient, and resistance to radiation damage. In this study, we present Sn-doped Ga2O3 microwire detectors for solar-blind and X-ray detection. The developed detectors exhibit a switching ratio of 1.66 × 102 under X-ray irradiation and can operate stably from room temperature to 623 K, which is one of the highest reported operating temperatures for Ga2O3 X-ray detectors to date. These findings offer a promising new direction for the design of Ga2O3-based X-ray detectors.

Funder

Science and Technology on Plasma Physics Laboratory

National Natural Science Foundation of China

Natural Science Foundation of Henan

Science and Technology Major Project of Henan Province

Publisher

MDPI AG

Subject

General Materials Science

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