Investigation of Perovskite Solar Cells Using Guanidinium Doped MAPbI3 Active Layer

Author:

Chang Ting-Chun1,Lee Ching-Ting123ORCID,Lee Hsin-Ying14ORCID

Affiliation:

1. Department of Photonics, National Cheng Kung University, Tainan 701, Taiwan

2. Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan

3. Department of Electrical Engineering, Yuan Ze University, Taoyuan 320, Taiwan

4. Meta-nanoPhotonics Center, National Cheng Kung University, Tainan 701, Taiwan

Abstract

In this work, guanidinium (GA+) was doped into methylammonium lead triiodide (MAPbI3) perovskite film to fabricate perovskite solar cells (PSCs). To determine the optimal formulation of the resulting guanidinium-doped MAPbI3 ((GA)x(MA)1−xPbI3) for the perovskite active layer in PSCs, the perovskite films with various GA+ doping concentrations, annealing temperatures, and thicknesses were systematically modulated and studied. The experimental results demonstrated a 400-nm-thick (GA)x(MA)1−xPbI3 film, with 5% GA+ doping and annealed at 90 °C for 20 min, provided optimal surface morphology and crystallinity. The PSCs configured with the optimal (GA)x(MA)1−xPbI3 perovskite active layer exhibited an open-circuit voltage of 0.891 V, a short-circuit current density of 24.21 mA/cm2, a fill factor of 73.1%, and a power conversion efficiency of 15.78%, respectively. Furthermore, the stability of PSCs featuring this optimized (GA)x(MA)1−xPbI3 perovskite active layer was significantly enhanced.

Funder

National Science and Technology Council (NSTC), Republic of China

Publisher

MDPI AG

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