Infrared LED Enhanced Spectroscopic CdZnTe Detector Working under High Fluxes of X-rays-Reference-Cited by-同舟云学术

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Infrared LED Enhanced Spectroscopic CdZnTe Detector Working under High Fluxes of X-rays

Published:2016-09-27 Issue:10 Volume:16 Page:1591
ISSN:1424-8220
Container-title:Sensors
language:en
Short-container-title:Sensors

Author:

Pekárek Jakub,Dědič Václav,Franc Jan,Belas Eduard,Rejhon Martin,Moravec Pavel,Touš Jan,Voltr Josef

Funder

Czech Science Foundation

Charles University Grant Agency

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Biochemistry,Instrumentation,Atomic and Molecular Physics, and Optics,Analytical Chemistry

Link

http://www.mdpi.com/1424-8220/16/10/1591/pdf

Reference20 articles.

1. Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications

2. Nature of polarization in wide-bandgap semiconductor detectors under high-flux irradiation: Application to semi-insulatingCd1−xZnxTe

3. CdTe/CZT under high flux irradiation

4. Radiation induced control of electric field in Au/CdTe/In structures

5. Electric Field and Current Transport Mechanisms in Schottky CdTe X-ray Detectors under Perturbing Optical Radiation

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1. Investigation of the Influence of Infrared Illumination on the Pulse Shapes of Output Signals of CdZnTe Detectors;Sensors;2023-12-16

2. Use of CdZnTe Quasi-Hemispherical Detectors under the Impact of Low Temperatures and High-Gamma Radiation Fluxes;Sensors;2023-10-10

3. Investigation of internal electric fields in graphene/6H-SiC under illumination by the Pockels effect;Optics Express;2023-09-26

4. Electric-Field Mapping of Optically Perturbed CdTe Radiation Detectors;Sensors;2023-05-16

5. Structural, Electronic, and UV–Vis Properties for Cd11-nZnnTe11with (n = 0,2–5,11) Nanostructures: A DFT and TDDFT Study;Journal of Electronic Materials;2023-01-10

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