Surface Plasmons Excited by X-rays in the Surface Layers of Solids

Author:

Stozharov Valery M.

Abstract

The phenomenon of total external reflection of X-rays at a sliding angle of incidence of a beam of incident X-rays is investigated. For metals, a quantitative law of direct dependence of the refractive index decrement on the interplane distance is obtained. The excitation of surface plasmons by X-rays that have experienced complete external reflection is detected. For surface plasmons, a dimensional effect was observed, expressed in an increase in the energy of plasmons and the concentration of conduction electrons with an increase in the depth of the output of surface plasmons. By the method of dispersion of surface plasmons, internal mechanical micro-stresses and spontaneous polarization of the surface layers of glassy dielectrics and in thin layers of vanadium dioxide were determined. The absence of micro-stresses in the lithium fluoride ionic single crystal was found out, and the polarization observed in it is due to the large dipole moment of the molecules of this crystal. In thin films of vanadium dioxide, the dependence of micro-stresses on the stresses in the substrates was found.

Funder

Ministry of Science and Higher Education of the Russian Federation

Publisher

MDPI AG

Reference56 articles.

1. Solid State Theory;Davydov,1976

2. Principles of the Theory of Solids;Ziman,1964

3. Elementary Excitations in Solids;Pines,1963

4. Angular dependence of characteristic losses in magnesium and barium;Bronstein;Izv. USSR Acad. Sci. Phys. Ser.,1976

5. Physics of Metal Films;Komnik,1979

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3