Plasmon Resonance in a System of Bi Nanoparticles Embedded into (Al,Ga)As Matrix

Author:

Ushanov Vitalii I.1,Eremeev Sergey V.23ORCID,Silkin Vyacheslav M.456,Chaldyshev Vladimir V.1ORCID

Affiliation:

1. Ioffe Institute, 26 Politekhnicheskaya Str., 194021 Saint Petersburg, Russia

2. Institute of Strength Physics and Materials Science, Siberian Branch, Russian Academy of Sciences, 634055 Tomsk, Russia

3. Saint Petersburg State University, 199034 Saint Petersburg, Russia

4. Departamento de Polímeros y Materiales Avanzados: Física, Química y Tecnología, Facultad de Ciencias Químicas, Universidad del País Vasco (UPV-EHU), Apdo. 1072, E-20080 San Sebastián, Basque Country, Spain

5. Donostia International Physics Center (DIPC), Paseo de Manuel Lardizabal 4, E-20018 San Sebastián, Basque Country, Spain

6. Ikerbasque, Basque Foundation for Science, E-48011 Bilbao, Basque Country, Spain

Abstract

We reveal the feasibility of the localized surface plasmon resonance in a system of Bi nanoparticles embedded into an AlxGa1−xAs semiconductor matrix. With an ab initio determined dielectric function for bismuth and well-known dielectric properties of AlxGa1−xAs solid solution, we performed calculations of the optical extinction spectra for such metamaterial using Mie’s theory. The calculations demonstrate a strong band of the optical extinction using the localized surface plasmons near a photon energy of 2.5 eV. For the semiconducting matrices with a high aluminum content x>0.7, the extinction by plasmonic nanoparticles plays the dominant role in the optical properties of the medium near the resonance photon energy.

Publisher

MDPI AG

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