Effect of P2O5 Content on Luminescence of Reduced Graphene-Oxide-Doped ZnO–P2O5 Nano-Structured Films Prepared via the Sol–Gel Method

Author:

Vasiliu Ileana Cristina1ORCID,Filip Ana Violeta2ORCID,Chilibon Irinela1,Elisa Mihail1,Bartha Cristina3ORCID,Kuncser Victor3ORCID,Leca Aurel3,Boroica Lucica2,Sava Bogdan Alexandru24ORCID,Trusca Roxana5,Eftimie Mihai4ORCID,Nicoara Adrian4ORCID

Affiliation:

1. National Institute for Research and Development in Optoelectronics—INOE 2000, 409 Atomistilor Str., RO-077125 Magurele, Romania

2. National Institute for Laser, Plasma and Radiation Physics (INFLPR), 409 Atomistilor Str., RO-077125 Magurele, Romania

3. National Institute of Materials Physics, 405 A Atomistilor Str., RO-077125 Magurele, Romania

4. Department of Science and Engineering of Oxide Materials and Nanomaterials, National University of Science and Technology “Politehnica” of Bucharest, 1 Polizu Street, RO-011061 Bucharest, Romania

5. Faculty of Engineering in Foreign Languages, University of Science and Technology “Politehnica” of Bucharest, 313 Splaiul Independentei Str., RO-060042 Bucharest, Romania

Abstract

A convenient and low-cost sol–gel approach for the one-step synthesis of ZnO–P2O5–rGO nanostructures with tuned bandgap and fluorescence was investigated. The obtained hybrid nanostructures exploit the properties of zinc oxide, graphene oxide and phosphorous oxide as promising candidates for a wide range of optoelectronic applications. A predominant amorphous structure, ZnO–P2O5–rGO, containing ZnO nanorods was evidenced by X-ray diffraction analysis (XRD) and scanning electron microscopy (SEM). The estimated size of the ZnO nanorods in nanostructures with P2O5 was noticed to decrease when the P2O5/ZnO ratio was increased. The presence of ZnO, P2O5 and rGO was confirmed by Fourier-transform infrared spectroscopy (FTIR) and Raman investigation. P2O5 was noticed to tune the bandgap and the fluorescence emissions of the nanostructured films, as estimated by UV–Vis–NIR and fluorescence spectroscopy, respectively. The electrical measurements performed at room temperature showed that the main influence on the film’s resistivity does not come from the 1% rGO doping but from the P2O5/ZnO ratio. It was found that a 10/90 molar ratio of P2O5/ZnO decreases the resistivity almost seven-fold compared with rGO-doped ZnO films.

Funder

Romanian National Authority for Scientific Research and Innovation

Romanian Ministry of Research, Innovation and Digitalization

Program I—Development of the National R & D System, Subprogram 1.2–Institutional Performance–Projects for Excellence Financing

Publisher

MDPI AG

Subject

General Materials Science

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