Research on the Mechanical Failure Risk Points of Ti/Cu/Ti/Au Metallization Layer

Abstract

The cohesive performance and durability of the bonding layer with semiconductor substrates are of paramount importance for realizing the high thermal conductivity capabilities of diamond. Utilizing electron beam evaporation and the room-temperature, low-pressure bonding process, robust adhesion between diamonds and silicon substrates has been achieved through the application of the metal modification layer comprised of Ti/Cu/Ti/Au (5/300/5/50 nm). Characterization with optical microscopy and atomic force microscopy reveals the uniformity and absence of defects on the surface of the deposited layer. Observations through X-ray and scanning acoustic microscopy indicate no discernible bonding defects. Scanning electron microscopy observation and energy-dispersive spectroscopy analysis of the fracture surface show distinct fracture features on the silicon substrate surface, indicating that the bonding strength of the Ti/Cu/Ti/Au metallization layer surpasses that of the base material. Furthermore, the fracture surface exhibits the presence of Cu and trace amounts of Ti, suggesting that the fracture also occurs at the interface between Ti and Cu. Characterization of the metal modification layer using X-ray diffraction reveals significant lattice distortion in the Ti layer, leading to noticeable stress accumulation within the crystalline structure. Thermal–mechanical fatigue simulations of the Ti/Cu/Ti/Au metal modification layer indicate that, owing to the difference in the coefficient of thermal expansion, the stress exerted by the Cu layer on the Ti layer results in the accumulation of fatigue damage within the Ti layer, ultimately leading to a reduction in its strength and eventual failure.