Abstract
Doping CeO2 with Y cations was achieved in this study using three strategies: doping only during the hydrothermal process (H-Y-doped CeO2), doping only during the impregnation process (I-Y-doped CeO2), and doping during both the hydrothermal and impregnation processes (H/I-Y-doped CeO2). During the three synthesis strategies of Y-doped CeO2, these Y ions could be incorporated into the CeO2 lattice in the +3 state while holding the cubic fluorite structure, and no impurity phases were detected. Pure CeO2 crystal itself contained a certain number of intrinsic VO defects, and Y-doping was beneficial for the creation of extrinsic VO defects. The relative concentrations of VO defects were quantified by the values of A592/A464 obtained from Raman spectra, which were 1.47, 0.93, and 1.16 for the H-Y-, I-Y-, and H/I-Y-doped CeO2, respectively, and were higher than that of the undoped one (0.67). Moreover, the OSCs of the three Y-doped CeO2 were enhanced, and the sequence of OSCs was: H-Y-doped CeO2 (0.372 mmol/g) > H/I-Y-doped CeO2 (0.353 mmol/g) > I-Y-doped CeO2 (0.248 mmol/g) > Undoped CeO2 (0.153 mmol/g); this result was in good agreement with the Raman spectroscopy results.
Funder
Opening Project of Crystalline Silicon Photovoltaic New Energy Research Institute
Fundamental Research Funds for the Central Universities
Subject
General Materials Science
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