Design of a Biaxial High-G Piezoresistive Accelerometer with a Tension–Compression Structure
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Published:2023-07-25
Issue:8
Volume:14
Page:1492
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ISSN:2072-666X
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Container-title:Micromachines
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language:en
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Short-container-title:Micromachines
Author:
Wang Peng123ORCID, Yang Yujun1ORCID, Chen Manlong12, Zhang Changming123ORCID, Wang Nan12, Yang Fan123, Peng Chunlei123, Han Jike1, Dai Yuqiang1ORCID
Affiliation:
1. School of Mechanical Engineering, Shaanxi University of Technology, Hanzhong 723001, China 2. Shaanxi Key Laboratory of Industrial Automation, Hanzhong 723001, China 3. Engineering Research Center of Manufacturing and Testing for Landing Gear and Aircraft Structural Parts, Universities of Shaanxi Province, Hanzhong 723001, China
Abstract
To meet the measurement needs of multidimensional high-g acceleration in fields such as weapon penetration, aerospace, and explosive shock, a biaxial piezoresistive accelerometer incorporating tension–compression is meticulously designed. This study begins by thoroughly examining the tension–compression measurement mechanism and designing the sensor’s sensitive structure. A signal test circuit is developed to effectively mitigate cross-interference, taking into account the stress variation characteristics of the cantilever beam. Subsequently, the signal test circuit of anti-cross-interference is designed according to the stress variation characteristics of the cantilever beam. Next, the finite element method is applied to analyze the structure and obtain the performance indices of the range, vibration modes, and sensitivity of the sensor. Finally, the process flow and packaging scheme of the chip are analyzed. The results show that the sensor has a full range of 200,000 g, a sensitivity of 1.39 µV/g in the X direction and 1.42 µV/g in the Y direction, and natural frequencies of 509.8 kHz and 510.2 kHz in the X and Y directions, respectively.
Funder
Key Research and Development Program of Shaanxi Key Industrial Chain Program of Shaanxi
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering
Reference15 articles.
1. Cai, S., Li, W., Zou, H., Bao, H., Zhang, K., Wang, J., Song, Z., and Li, X. (2019). Design, Fabrication, and Testing of a Monolithically Integrated Tri-Axis High-Shock Accelerometer in Single (111)-Silicon Wafer. Micromachines, 10. 2. Zhao, X.F., Wang, Y., and Wen, D.Z. (2019). Fabrication and Characteristics of a SOI Three-Axis Acceleration Sensor Based on MEMS Technology. Micromachines, 10. 3. Kuells, R., Bruder, M., Nau, S., Salk, M., and Hansch, W. (2014, January 25–26). Design of a 1D and 3D monolithically integrated piezoresistive MEMS high-g accelerometer. Proceedings of the International Symposium on Inertial Sensors & Systems, Laguna Beach, CA, USA. 4. Novel high-performance piezoresistive shock accelerometer for ultra-high-g measurement utilizing self-support sensing beams;Jia;Rev. Sci. Instrum.,2020 5. High Shock-Resistant Design for Wafer-Level-Packaged Three-Axis Accelerometer with Ring-Shaped Beam;Kazama;J. Microelectromech. Syst.,2018
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