Affiliation:
1. Department of Electrical Engineering, the Center for More-Electric-Aircraft Power System, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China
2. Department of Electrical Engineering, Chalmers University of Technology, 41279 Gothenburg, Sweden
Abstract
In conventional parameters design, the driving circuit is usually simplified as an RLC second-order circuit, and the switching characteristics are optimized by selecting parameters, but the influence of switching characteristics on the driving circuit is not considered. In this paper, the insight mechanism for the gate-source voltage changed by overshoot and ringing caused by the high switching speed of SiC MOSFET is highlighted, and we propose an optimized design method to obtain optimal parameters of the SiC MOSFET driving circuit with consideration of parasitic parameters. Based on the double-pulse circuit, we evaluated the influence of main parameters on the gate-source voltage, including driving voltage, driving resistance, gate parasitic inductance, and stray inductance of the power circuit. A SiC-based boost PFC is constructed and tested. The test results show that the switching loss can be reduced by 7.282 W by using the proposed parameter optimization method, and the over-voltage stress of SiC MOSFET is avoided.
Funder
the State Key Laboratory of Wide-Bandgap Semiconductor Power Electronic Devices, China
the National Natural Science Foundation of China
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering
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