Anti-High-Power Microwave RFID Tag Based on Highly Thermal Conductive Graphene Films

Author:

Liu Xueyu12,Song Rongguo12,Fu Huaqiang3,Zhu Wei45,Luo Kaolin12,Xiao Yang12,Zhang Bohan45ORCID,Wang Shengxiang45,He Daping12ORCID

Affiliation:

1. School of Science, Wuhan University of Technology, Wuhan 430070, China

2. Hubei Engineering Research Center of RF-Microwave Technology and Application, Wuhan University of Technology, Wuhan 430070, China

3. School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China

4. School of Mathematical and Physical Sciences, Wuhan Textile University, Wuhan 430073, China

5. State Key Laboratory of New Textile Materials and Advanced Processing Technologies, Wuhan Textile University, Wuhan 430200, China

Abstract

In this paper, a radio frequency identification (RFID) tag is designed and fabricated based on highly electrical and thermal conductive graphene films. The tag operates in the ultrahigh-frequency (UHF) band, which is suitable for high-power microwave environments of at least 800 W. We designed the protection structure to avoid charge accumulation at the antenna’s critical positions. In the initial state, the read range of the anti-high-power microwave graphene film tag (AMGFT) is 10.43 m at 915 MHz. During the microwave heating experiment, the aluminum tag causes a visible electric spark phenomenon, which ablates the aluminum tag and its attachment, resulting in tag failure and serious safety issues. In contrast, the AMGFT is intact, with its entire read range curve growing and returning to its initial position as its temperature steadily decreases back to room temperature. In addition, the proposed dual-frequency tag further confirms the anti-high-power microwave performance of graphene film tags and provides a multi-scenario interactive application.

Funder

National Natural Science Foundation of China

the Fundamental Research Funds for the Central Universities

Publisher

MDPI AG

Subject

General Materials Science

Reference24 articles.

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