Affiliation:
1. Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education Ministry, School of Microelectronics, Xidian University, Xi’an 710071, China
Abstract
In order to detect biomolecules, a biosensor based on a dielectric-modulated stacked source trench gate tunnel field effect transistor (DM-SSTGTFET) is proposed. The stacked source structure can simultaneously make the on-state current higher and the off-state current lower. The trench gate structure will increase the tunneling area and tunneling probability. Technology computer-aided design (TCAD) is used for the sensitivity study of the proposed structured biosensor. The results show that the current sensitivity of the DM-SSTGTFET biosensor can be as high as 108, the threshold voltage sensitivity can reach 0.46 V and the subthreshold swing sensitivity can reach 0.8. As a result of its high sensitivity and low power consumption, the proposed biosensor has highly promising prospects.
Funder
National Natural Science Foundation of China
Subject
General Materials Science,General Chemical Engineering
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