Thermal Effects on Domain Wall Stability at Magnetic Stepped Nanowire for Nanodevices Storage

Abstract

In the future, DW memory will replace conventional storage memories with high storage capacity and fast read/write speeds. The only failure in DW memory arises from DW thermal fluctuations at pinning sites. This work examines, through calculations, the parameters that might help control DW thermal stability at the pinning sites. It is proposed to design a new scheme using a stepped area of a certain depth (d) and length (λ). The study reveals that DW thermal stability is highly dependent on the geometry of the pinning area (d and λ), magnetic properties such as saturation magnetization (Ms) and magnetic anisotropy energy (Ku), and the dimensions of the nanowires. For certain values of d and λ, DWs remain stable at temperatures over 500 K, which is beneficial for memory applications. Higher DW thermal stability is also achieved by decreasing nanowire thickness to less than 10 nm, making DW memories stable below 800 K. Finally, our results help to construct DW memory nanodevices with nanodimensions less than a 40 nm width and less than a 10 nm thickness with high DW thermal stability.