Physical Properties of CaTiO3-Modified NaNbO3 Thin Films

Author:

Xue Yongmei1,Ma Li1,Han Zhuokun2,Liu Jianwei1,Wang Zejun1,Liu Pengcheng3,Zhang Yu4,Dong Huijuan1

Affiliation:

1. Department of Physics, Changzhi University, Changzhi 046011, China

2. School of Science and Technology, Northwestern Polytechnical University, Xi’an 710072, China

3. Research Institute of Opto-Mechatronics Industry, Jincheng 048000, China

4. Shanxi Key Laboratory of Advanced Semiconductor Optoelectronic Devices and Integrated Systems, Jincheng 048000, China

Abstract

NaNbO3(NN)-based lead-free materials are attracting widespread attention due to their environment-friendly and complex phase transitions, which can satisfy the miniaturization and integration for future electronic components. However, NN materials usually have large remanent polarization and obvious hysteresis, which are not conducive to energy storage. In this work, we investigated the effect of introducing CaTiO3((1−x)NaNbO3-xCaTiO3) on the physical properties of NN. The results indicated that as x increased, the surface topography, oxygen vacancy and dielectric loss of the thin films were significantly improved when optimal value was achieved at x = 0.1. Moreover, the 0.9NN-0.1CT thin film shows reversible polarization domain structures and well-established piezoresponse hysteresis loops. These results indicate that our thin films have potential application in future advanced pulsed power electronics.

Funder

Applied Basic Research Program of Shanxi Province of China

Scientific and Technologic Innovation Programs of Higher Education Institutions in Shanxi of China

Open Project Program of Shanxi Key Laboratory of Advanced Semiconductor Optoelectronic Devices and Integrated Systems

Publisher

MDPI AG

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