Device Optimization of a Lead-Free Perovskite/Silicon Tandem Solar Cell with 24.4% Power Conversion Efficiency

Abstract

In this work, simulations were performed to optimize the parameters of a lead-free perovskite/silicon tandem solar cell for the improved efficiency and stability of commercial devices. The top sub-cell is based on a lead-free perovskite with a large bandgap of 1.8 eV, an electron transport layer of SnO2/PCBM, which is known for its anti-hysteresis effect, and a hole transport layer of NiO to improve stability, whereas the bottom sub-cell is based on n-type silicon to increase the efficiency of the whole cell. First, the two sub-cells were simulated under standalone conditions for calibration purposes. Then, the current matching condition was obtained by optimizing the thicknesses of the absorber layers of both sub-cells and the doping concentration of the back surface field (BSF) layer of the silicon sub-cell. As a result of this optimization phase, thicknesses of 380 nm and 20 µm for the top and bottom sub-cells, respectively, and a doping concentration of 1022 cm–3 were used in the configuration of the tandem cell, yielding a large open-circuit voltage of 1.76 V and a power conversion efficiency of 24.4% for the whole cell. Finally, the effect of the working temperature was evaluated, and the results reveal that the high performance of lead-free perovskite sub-cells is less affected by an increase in temperature compared to lead-based solar cells, such as those based on CH3NH3PbI3 perovskite.