Stabilization of Long-Pitch Supertwisted Nematic Structures

Abstract

Stabilized reverse twisted nematic liquid crystal devices (RTN-LCDs) were fabricated using formation of a polymer matrix under UV irradiation with an applied voltage (sustain voltage) in the vicinity of the alignment layers. In the absence of an applied voltage, the non-stabilized RTN structure gradually returns to a splay twist structure. The sustain voltage was decreased with an increase in temperature. A stabilized long-pitch supertwisted nematic (LPSTN) structure could also be formed during the RTN structure stabilization process with a much lower sustain voltage at a temperature near the clearing point. The chiral pitch for the LPSTN structure is longer than that for a typical STN structure. LPSTN-LCDs similar to RTN-LCDs show a large reduction in both the threshold and saturation voltage compared with those for TN-LCDs consisted of the same LC materials. Furthermore, a notable feature of LPSTN-LCDs is a change to a TN structure when a high voltage is applied. A black state can be realized due to the change from the LPSTN structure to the RTN structure unlike the typical STN mode under the crossed nicols condition. In contrast STN-LCDs retain their color due to the retardation because the RTN and LPSTN states are considered topologically equivalent.