Abstract
A contemporary apparatus with radiation (light) heating for growth of single crystals of refractory oxides and metals is described. To reduce the dissociation or evaporation of the melt or crystal components, the growth process was carried out in oxygen or an alternative gas at pressures up to 100 bar. The annealing system applied directly in the growth process at 1650 °C under O2 pressure and at temperatures up to 2500 °C under protective gas flow, allows the obtaining of large and perfect single crystals. Many single crystals of oxide materials, including incongruently melting substances, such as Y3Fe5O12, Gd3Fe5O12, BaFe12O19, SrFe12O19, BaFe12-x AlxO19, and many others have been grown, and much more could be grown.
Subject
Inorganic Chemistry,Condensed Matter Physics,General Materials Science,General Chemical Engineering
Reference23 articles.
1. Floating Zone Crystals Using an Arc Image Furnace
2. Zone melting of oxides in a carbon arc image furnace;Kooy;Philips Techn. Rev.,1962
3. Verneuil Crystal Growth in the Arc‐Image Furnace
4. Growth of Nd:YAG crystals by floating zone technique;O’Bryan;Am. Ce Soc. Bull.,1966
5. Domain-wall mobility in orthoferrite crystals grown by float-zone technique
Cited by
7 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献