Abstract
All-inorganic perovskites, with their low-cost, simple processes and superior heat stability, have become potential candidate materials for photodetectors (PDs). However, they have no representative responsivity in the deep-ultraviolet (UV) wavelength region. As a new-generation semiconductor, gallium oxide (Ga2O3), which has an ultrawide bandgap, is appropriate for solar-blind (200 nm–280 nm) deep-UV detection. In this work, ultrawide-bandgap Ga2O3 was introduced into an inorganic perovskite device with a structure of sapphire/β-Ga2O3/Indium Zinc Oxide (IZO)/CsPbBr3. The performance of this perovskite PD was obviously enhanced in the deep UV region. A low-cost, vacuum-free Mist-CVD was used to realize the epitaxial growth of β-Ga2O3 film on sapphire. By introducing the Ga2O3 layer, the light current of this heterojunction PD was obviously enhanced from 10−8 to 10−7, which leds its detectivity (D*) to reach 1.04 × 1012 Jones under a 254 nm light illumination with an intensity of 500 μW/cm2 at a 5 V bias.
Funder
National Key R&D Program of China
National Natural Science Foundation of China
Key Area R&D Program of Guangdong Province
Subject
Fluid Flow and Transfer Processes,Computer Science Applications,Process Chemistry and Technology,General Engineering,Instrumentation,General Materials Science
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献