Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate-Reference-Cited by-同舟云学术

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Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate

Published:2016-09-27 Issue:10 Volume:9 Page:803
ISSN:1996-1944
Container-title:Materials
language:en
Short-container-title:Materials

Author:

Lin Guangyang,Chen Ningli,Zhang Lu,Huang Zhiwei,Huang Wei,Wang Jianyuan,Xu Jianfang,Chen Songyan,Li Cheng

Funder

National Natural Science Foundation of China

Publisher

MDPI AG

Subject

General Materials Science

Link

http://www.mdpi.com/1996-1944/9/10/803/pdf

Reference36 articles.

1. Cramming More Components Onto Integrated Circuits

2. Ge-on-Si photonic devices for photonic-electronic integration on a Si platform

3. Silicon CMOS devices beyond scaling

4. A roadmap for nanophotonics

5. Overcoming the limitations of microelectronics using Si nanophotonics: solving the coupling, modulation and switching challenges

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1. Harvesting strong photoluminescence of physical vapor deposited GeSn with record high deposition temperature;Journal of Physics D: Applied Physics;2023-05-30

2. Significant reduction of crack propagation in the strained SiGe/Ge(111) induced by the local growth on the depth-controlled area patterning;Applied Physics Express;2022-12-19

3. Enhanced photoluminescence of GeSn by strain relaxation and spontaneous carrier confinement through rapid thermal annealing;Journal of Alloys and Compounds;2022-09

4. Research progress in the epitaxial growth of silicon-based group IV materials, and their light emitters and photodetectors;SCIENTIA SINICA Physica, Mechanica & Astronomica;2021-01-01

5. Room-temperature 1550-nm lasing from tensile strain N-doped Ge quantum dots on Si;Journal of Modern Optics;2020-07-11

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