Investigation of Ripple Formation on Surface of Silicon by Low-Energy Gallium Ion Bombardment

Abstract

Regular wave patterns were created by a 2 kV gallium ion on Si(111) monocrystals at incidence angles between 60° and 80° with respect to the surface normal. The characteristic wavelength and surface roughness of the structured surfaces were determined to be between 35–75 nm and 0.5–2.5 nm. The local slope distribution of the created periodic structures was also studied. These topography results were compared with the predictions of the Bradley–Harper model. The amorphised surface layers were investigated by a spectroscopic ellipsometer. According to the results, the amorphised thicknesses were changed in the range of 8 nm to 4 nm as a function of ion incidence angles. The reflectance of the structured surfaces was simulated using ellipsometric results and measured with a reflectometer. Based on the spectra, a controlled modification of reflectance within 45% and 50% can be achieved on Si(111) at 460 nm wavelength. According to the measured results, the characteristic sizes (periodicity and amplitude) and optical property of silicon can be fine-tuned by low-energy focused ion irradiation at the given interval of incidence angles.