Parasitic Parameters Extraction of High-Speed Vertical-Cavity Surface-Emitting Lasers

Abstract

Parasitic parameters, including electrical capacity and inductance, are the key limiting factors for bandwidth improvement of high-speed vertical-cavity surface-emitting lasers (VCSELs). The traditional parasitic extraction method, which uses a first-order low-pass filter transfer function, is oversimplified, and there are large deviations between the obtained data and the actual measured data. In this paper, we proposed a modified parasitic extraction method that described the extrinsic behaviour of the high-speed oxide-confined VCSELs well and easily extracted the values of all parasitic parameters. This method can also precisely fit microwave reflection coefficient S11 data even at high frequencies and provide design guidance for high-speed VCSELs. Using this method, a high-speed 850 nm VCSEL featuring a six-layer oxide aperture with −3 dB bandwidth up to 23.3 GHz was analysed. The electrical parasitics have been systematically extracted from VCSELs with different oxide apertures. The enhanced bandwidth based on the improvement of parasitic parameters was discussed. It was found that the critical parasitic factors that affect the −3 dB bandwidth of VCSELs are pad capacitance and inductance.